IPI126N10N3 G
Manufacturer Product Number:

IPI126N10N3 G

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPI126N10N3 G-DG

Description:

MOSFET N-CH 100V 58A TO262-3
Detailed Description:
N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO262-3

Inventory:

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12804715
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IPI126N10N3 G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
12.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI126N

Datasheet & Documents

Datasheets
IPI126N10N3 G

Additional Information

Other Names
IPI126N10N3G
IPI126N10N3 G-DG
IFEINFIPI126N10N3 G
2156-IPI126N10N3 G-IT
Standard Package
500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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